FQD10N20CTM
Manufacturer:
On Semiconductor
Mfr.Part #:
FQD10N20CTM
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 50 W 200 V Continuous Drain Current (ID):7.8 A 26 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 6.6 mm |
| Width | 6.1 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 360 mΩ |
| Height | 2.3 mm |
| Packaging | Reel |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 7.8 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 50 W |
| Power Dissipation | 50 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 510 pF |
| Continuous Drain Current (ID) | 7.8 A |
| Rds On Max | 360 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 70 ns |
| Element Configuration | Single |
| Fall Time | 72 ns |
| Rise Time | 92 ns |
| Gate Charge | 26 nC |
| Drain to Source Resistance | 360 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2 V |
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